The Influence of Annealing Temperature and Doping on the...

MRS Proceedings 2001 / 1 Vol. 692

The Influence of Annealing Temperature and Doping on the Red/Near-Infrared Luminescence of Ion Implanted SiO2:nc-Si

Tetelbaum, D. I., Burdov, V. A., Trushin, S. A., Mikhaylov, A. N., Revin, D. G., Gaponova, D. M.
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Volume:
692
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-692-h10.8.1
Date:
January, 2001
File:
PDF, 172 KB
english, 2001
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