Electrical Characterization of GaN Metal Oxide Semiconductor Diode using Sc2O3 as the Gate Oxide
Mehandru, R., Gila, B.P., Kim, J., Johnson, J.W., Lee, K.P., Luo, B., Onstine, A.H., Abernathy, C. R., Pearton, S.J., Ren, F.Volume:
693
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-693-i11.47.1
Date:
January, 2001
File:
PDF, 66 KB
english, 2001