High common-emitter current gains obtained by pnp GaN...

MRS Proceedings 2001 / 1 Vol. 693

High common-emitter current gains obtained by pnp GaN bipolar junction transistors

Kumakura, Kazuhide, Makimoto, Toshiki, Kobayashi, Naoki

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Volume:

693

Language:

english

Journal:

MRS Proceedings

DOI:

10.1557/proc-693-i12.2.1

Date:

January, 2001

File:

PDF, 66 KB

english, 2001

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