The Effect of Growth Stoichiometry on the GaN Dislocation...

MRS Proceedings 2002 / 1 Vol. 743

The Effect of Growth Stoichiometry on the GaN Dislocation Core Structure

Baines, Marcus Q., Cherns, David, Hsu, Julia W. P., Manfra, Michael J.
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Volume:
743
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-743-l2.5
Date:
January, 2002
File:
PDF, 787 KB
english, 2002
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