Lattice constant variation in GaN:Si layers grown by HVPE
Usikov, A., Kovalenkov, O. V., Mastro, M. M., Tsvetkov, D. V., Pechnikov, A. I., Soukhoveev, V. A., Shapovalova, Y. V., Gainer, G. H.Volume:
743
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-743-l3.41
Date:
January, 2002
File:
PDF, 100 KB
english, 2002