Gate Current Modeling for Insulating Gate III-N Heterostructure Field-Effect Transistors
Clarke, Frederick W., Ho, Fat Duen, Asif Khan, M., Simin, Grigory, Yang, J., Gaska, Remis, Shur, Michael S., Deng, Jianyu, Karmalkar, S.Volume:
743
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-743-l9.10
Date:
January, 2002
File:
PDF, 209 KB
english, 2002