LP-MOCVD growth of GaAlN/GaN heterostructures on Silicon...

MRS Proceedings 2003 / 1 Vol. 798

LP-MOCVD growth of GaAlN/GaN heterostructures on Silicon Carbide. Application to HEMT's devices.

di Forte Poisson, M-A., Magis, M., Tordjman, M., Aubry, R., Peschang, M., Delage, S. L., di Persio, J., Grimbert, B., Hoel, V., Delos, E., Ducatteau, D., Gaquiere, C.
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Volume:
798
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-798-y10.26
Date:
January, 2003
File:
PDF, 891 KB
english, 2003
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