Nonuniform Morphology and Luminescence Properties of a...

MRS Internet Journal of Nitride Semiconductor Research 1997 Vol. 2

Nonuniform Morphology and Luminescence Properties of a Molecular Beam Epitaxy GaN Film from Atomic Force Microscopy, Scanning Electron Microscopy and Cathodoluminescence

Chao, L.-L., Cargill, G. S., Kothandaraman, C., Cyr, D., Flynn, G., Hellman, E. S., Wiesmann, D., Buchanan, D. N. E., Brener, I.
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Volume:
2
Year:
1997
Language:
english
Journal:
MRS Internet Journal of Nitride Semiconductor Research
DOI:
10.1557/s1092578300001332
File:
PDF, 1.66 MB
english, 1997
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