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An optoelectronic resistive switching memory behavior of Ag/α-SnWO4/FTO device
Han, Pengde, Sun, Bai, Cheng, Sen, Yu, Fangli, Jiao, Baoxiang, Wu, QishengVolume:
681
Language:
english
Journal:
Journal of Alloys and Compounds
DOI:
10.1016/j.jallcom.2016.04.268
Date:
October, 2016
File:
PDF, 1.62 MB
english, 2016