![](/img/cover-not-exists.png)
Characterization of top barrier thickness from gate capacitance of high mobility III-V semiconductor MOS-HEMT devices
Mim, Nugaira Gahan, Kutub, Sayeem Bin, Haque, AnisulVolume:
6
Year:
2016
Language:
english
Journal:
Results in Physics
DOI:
10.1016/j.rinp.2016.04.015
File:
PDF, 589 KB
english, 2016