Characterization of Parasitic Resistances of AlN/GaN/AlGaN...

IEEE Transactions on Microwave Theory and Techniques 2016 / 5 Vol. 64; Iss. 5

Characterization of Parasitic Resistances of AlN/GaN/AlGaN HEMTs Through TCAD-Based Device Simulations and On-Wafer Measurements

Subramani, Nandha Kumar, Sahoo, Amit Kumar, Nallatamby, Jean-Christophe, Sommet, Raphael, Rolland, Nathalie, Medjdoub, Farid, Quere, Raymond
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Volume:
64
Language:
english
Journal:
IEEE Transactions on Microwave Theory and Techniques
DOI:
10.1109/tmtt.2016.2549528
Date:
May, 2016
File:
PDF, 2.74 MB
english, 2016
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