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Physics-based analytical model for input, output and reverse capacitance of a GaN HEMT with the field-plate structure
Cucak, Dejana, Vasic, Miroslav, Garcia, Oscar, Oliver, Jesus A., Alou, Pedro, Cobos, Jose A., Wang, Ashu, Horcajo, Sara, Romero, Fatima, Calle, FernandoYear:
2016
Language:
english
Journal:
IEEE Transactions on Power Electronics
DOI:
10.1109/TPEL.2016.2569404
File:
PDF, 2.54 MB
english, 2016