Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate
Rossetto, Isabella, Meneghini, Matteo, Hilt, Oliver, Bahat-Treidel, Eldad, De Santi, Carlo, Dalcanale, Stefano, Wuerfl, Joachim, Zanoni, Enrico, Meneghesso, GaudenzioVolume:
63
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2016.2553721
Date:
June, 2016
File:
PDF, 1.73 MB
english, 2016