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Suppression of relaxation effect in HfO 2 resistive random access memory array by improved program operations
Wang, Chen, Wu, Huaqiang, Gao, Bin, Dai, Lingjun, Deng, Ning, Sekar, Deepak, Lu, Zhichao, Kellam, Mark, Bronner, Gary, Qian, HeVolume:
9
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.9.051501
Date:
May, 2016
File:
PDF, 1.93 MB
english, 2016