Optical properties of wurtzite GaN/AlN quantum dots grown...

Materials Science in Semiconductor Processing 2016 / 07 Vol. 49

Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field

Budagosky, J.A., Garro, N., Cros, A., García-Cristóbal, A., Founta, S., Daudin, B.
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Volume:
49
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2016.03.022
Date:
July, 2016
File:
PDF, 648 KB
english, 2016
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