Determination of Fowler–Nordheim tunneling parameters in...

Solid-State Electronics 2016 / 08 Vol. 122

Determination of Fowler–Nordheim tunneling parameters in Metal–Oxide–Semiconductor structure including oxide field correction using a vertical optimization method

Toumi, S., Ouennoughi, Z., Strenger, K.C., Frey, L.
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Volume:
122
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2016.04.007
Date:
August, 2016
File:
PDF, 1.18 MB
english, 2016
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