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Investigation of tunneling layer and inter-gate-dielectric engineered TaN floating gate memory
Jiang, Dandan, Jin, Lei, Fu, Liyin, Li, Xinkai, Chen, Guoxing, Huo, ZongliangVolume:
169
Language:
english
Journal:
Integrated Ferroelectrics
DOI:
10.1080/10584587.2016.1165566
Date:
February, 2016
File:
PDF, 837 KB
english, 2016