Communication—Anomalous Shift of the Capacitance-Voltage...

ECS Journal of Solid State Science and Technology 2016 Vol. 5; Iss. 7

Communication—Anomalous Shift of the Capacitance-Voltage Characteristics Obtained for p-MOS Capacitors with a Tin-Doped Indium Oxide Gate

Malik, Oleksandr, la Hidalga-Wade, F. Javier De
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Volume:
5
Year:
2016
Language:
english
Journal:
ECS Journal of Solid State Science and Technology
DOI:
10.1149/2.0011607jss
File:
PDF, 263 KB
english, 2016
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