A model for statistical electromigration simulation with...

Computational Materials Science 2016 / 07 Vol. 120

A model for statistical electromigration simulation with dependence on capping layer and Cu microstructure in two dimensions

Kraatz, Matthias, Gall, Martin, Zschech, Ehrenfried, Schmeisser, Dieter, Ho, Paul S.
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Volume:
120
Language:
english
Journal:
Computational Materials Science
DOI:
10.1016/j.commatsci.2016.04.020
Date:
July, 2016
File:
PDF, 1.59 MB
english, 2016
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