Comparative study of single InGaN layers grown on Si(111)...

Comparative study of single InGaN layers grown on Si(111) and GaN(0001) templates: The role of surface wetting and epitaxial constraint

Gómez, V.J., Gačević, Ž., Soto-Rodríguez, P.E.D., Aseev, P., Nötzel, R., Calleja, E., Sánchez-García, M.A.
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Volume:
447
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2016.04.007
Date:
August, 2016
File:
PDF, 913 KB
english, 2016
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