High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal–oxide–semiconductor heterostructure field-effect transistors
Lee, Jae-Gil, Kim, Hyun-Seop, Seo, Kwang-Seok, Cho, Chun-Hyung, Cha, Ho-YoungVolume:
122
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2016.04.016
Date:
August, 2016
File:
PDF, 1.31 MB
english, 2016