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Threshold Voltage Instabilities of Present SiC-Power MOSFETs under Positive Bias Temperature Stress
Rescher, Gerald, Pobegen, Gregor, Grasser, TiborVolume:
858
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.858.481
Date:
May, 2016
File:
PDF, 928 KB
english, 2016