Thermally Induced Tensile Strain of Epitaxial Ge Layers...

Journal of Nanoscience and Nanotechnology 2016 / 05 Vol. 16; Iss. 5

Thermally Induced Tensile Strain of Epitaxial Ge Layers Grown by a Two-Step e-Beam Evaporation Process on Si Substrates

Ki, Bugeun, Kim, Kyung Ho, Kim, Hyungjun, Lee, Chulwon, Cho, Yong-Hoon, Oh, Jungwoo
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Volume:
16
Language:
english
Journal:
Journal of Nanoscience and Nanotechnology
DOI:
10.1166/jnn.2016.12233
Date:
May, 2016
File:
PDF, 1.84 MB
english, 2016
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