Systematic Investigation of 4H-SiC Trench Properties...

Materials Science Forum 2016 / 5 Vol. 858

Systematic Investigation of 4H-SiC Trench Properties Dependence on Channel Concentration, Crystallographic Plane, and MOS Interface Treatment

Kitai, Hidenori, Hatayama, Tomoaki, Tamaso, Hideto, Kyogoku, Shinaya, Masuda, Takeyoshi, Shiomi, Hiromu, Harada, Shinsuke, Fukuda, Kenji
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Volume:
858
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.858.639
Date:
May, 2016
File:
PDF, 559 KB
english, 2016
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