An ultra-thin SiO2 ALD layer for void-free bonding of III–V...

Microelectronic Engineering 2016 / 08 Vol. 162

An ultra-thin SiO2 ALD layer for void-free bonding of III–V material on silicon

Talneau, A., Pantzas, K., Durnez, A., Patriarche, G., Alamarguy, D., Le Bourhis, E.
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Volume:
162
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2016.05.001
Date:
August, 2016
File:
PDF, 853 KB
english, 2016
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