Corrigendum to “Modelling of through silicon via and...

Microelectronics Journal 2015 / 11 Vol. 46; Iss. 11

Corrigendum to “Modelling of through silicon via and devices electromagnetic coupling” [Microelectron. J. 42 (2011) 316–324]

Abouelatta-Ebrahim, Mohamed, Dahmani, Rabah, Valorge, Olivier, Calmon, Francis, Gontrand, Christian
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Volume:
46
Language:
english
Journal:
Microelectronics Journal
DOI:
10.1016/j.mejo.2015.09.012
Date:
November, 2015
File:
PDF, 167 KB
english, 2015
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