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InN/InGaN complementary heterojunction-enhanced tunneling field-effect transistor with enhanced subthreshold swing and tunneling current
Peng, Yue, Han, Genquan, Wang, Hongjuan, Zhang, Chunfu, Liu, Yan, Wang, Yibo, Zhao, Shenglei, Zhang, Jincheng, Hao, YueVolume:
93
Language:
english
Journal:
Superlattices and Microstructures
DOI:
10.1016/j.spmi.2016.03.004
Date:
May, 2016
File:
PDF, 1.77 MB
english, 2016