Aluminum Oxide Formation at Al/La1−xSrxMnO3 Interface: A...

Journal of Nanoscience and Nanotechnology 2011 / 01 Vol. 11; Iss. 1

Aluminum Oxide Formation at Al/La1−xSrxMnO3 Interface: A Computational Study for Resistance Random Access Memory Applications

Lee, Nodo, Lansac, Yves, Jang, Yun Hee
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Volume:
11
Language:
english
Journal:
Journal of Nanoscience and Nanotechnology
DOI:
10.1166/jnn.2011.3202
Date:
January, 2011
File:
PDF, 1.54 MB
english, 2011
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