The reduction of critical H implantation dose for ion cut...

Applied Surface Science 2016 / 11 Vol. 385

The reduction of critical H implantation dose for ion cut by incorporating B-doped SiGe/Si superlattice into Si substrate

Xue, Zhongying, Chen, Da, Jia, Pengfei, Wei, Xing, Di, Zengfeng, Zhang, Miao
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Volume:
385
Language:
english
Journal:
Applied Surface Science
DOI:
10.1016/j.apsusc.2016.05.047
Date:
November, 2016
File:
PDF, 1.83 MB
english, 2016
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