Ultra-thin 20nm-PECVD-Si3N4 surface passivation in T-shaped...

Solid-State Electronics 2016 / 09 Vol. 123

Ultra-thin 20nm-PECVD-Si3N4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance

Ding, Peng, Chen, Chen, Ding, Wuchang, Yang, Feng, Su, Yongbo, Wang, Dahai, Jin, Zhi
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Volume:
123
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2016.05.011
Date:
September, 2016
File:
PDF, 1.41 MB
english, 2016
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