Complementary Skyrmion Racetrack Memory with Voltage...

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IEEE Electron Device Letters 2016

Complementary Skyrmion Racetrack Memory with Voltage Manipulation

Kang, Wang, Zheng, Chentian, Huang, Yangqi, Zhang, Xichao, Zhou, Yan, Lv, Weifeng, Zhao, WeiSheng
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Year:
2016
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2016.2574916
File:
PDF, 816 KB
english, 2016
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