Study of gate leakage mechanism in advanced charge-coupled MOSFET (CC-MOSFET) technology
Barletta, G., Ngwan, V.C.Volume:
57
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2015.11.019
Date:
February, 2016
File:
PDF, 1.08 MB
english, 2016