Experiments and root cause analysis for active-precharge...

Microelectronics Reliability 2016 / 02 Vol. 57

Experiments and root cause analysis for active-precharge hammering fault in DDR3 SDRAM under 3× nm technology

Park, Kyungbae, Lim, Chulseung, Yun, Donghyuk, Baeg, Sanghyeon
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Volume:
57
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2015.12.027
Date:
February, 2016
File:
PDF, 1.35 MB
english, 2016
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