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Back gate induced breakdown mechanisms for thin layer SOI field P-channel LDMOS
Zhou, Xin, Qiao, Ming, He, Yitao, Yang, Wen, Li, Zhaoji, Zhang, BoVolume:
89
Language:
english
Journal:
Superlattices and Microstructures
DOI:
10.1016/j.spmi.2015.11.004
Date:
January, 2016
File:
PDF, 1.92 MB
english, 2016