Dependence of ohmic contact properties on AlGaN layer...

Japanese Journal of Applied Physics 2016 / 04 Vol. 55; Iss. 4

Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high-electron-mobility transistors

Takei, Yusuke, Tsutsui, Kazuo, Saito, Wataru, Kakushima, Kuniyuki, Wakabayashi, Hitoshi, Iwai, Hiroshi
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Volume:
55
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.55.040306
Date:
April, 2016
File:
PDF, 924 KB
english, 2016
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