Effect of Doping Concentration Variations in PVT-Grown...

Journal of Electronic Materials 2016 / 4 Vol. 45; Iss. 4

Effect of Doping Concentration Variations in PVT-Grown 4H-SiC Wafers

Yang, Yu, Guo, Jianqiu, Goue, Ouloide, Raghothamachar, Balaji, Dudley, Michael, Chung, Gil, Sanchez, Edward, Quast, Jeff, Manning, Ian, Hansen, Darren
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Volume:
45
Language:
english
Journal:
Journal of Electronic Materials
DOI:
10.1007/s11664-016-4378-8
Date:
April, 2016
File:
PDF, 966 KB
english, 2016
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