Modelling oxygen vacancies at the Si(100)-SiO...

Philosophical Magazine A 1997 / 05 Vol. 75; Iss. 5

Modelling oxygen vacancies at the Si(100)-SiO 2 interface

Carniato, S., Boureau, G., Harding, J. H.
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Volume:
75
Language:
english
Journal:
Philosophical Magazine A
DOI:
10.1080/01418619708209865
Date:
May, 1997
File:
PDF, 921 KB
english, 1997
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