[IEEE 2006 International SiGe Technology and Device Meeting - Princeton, NJ, USA (15-17 May 2006)] 2006 International SiGe Technology and Device Meeting - Current Gain of SiGe HBTs Under High Base Doping Concentrations
Ningyue Jiang,, Zhenqiang Ma,Year:
2006
Language:
english
DOI:
10.1109/istdm.2006.1715994
File:
PDF, 1.60 MB
english, 2006