Atomic Layer Deposition of Gallium Oxide Films as Gate...

Nanoscale Research Letters 2016 / 12 Vol. 11; Iss. 1

Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

Shih, Huan-Yu, Chu, Fu-Chuan, Das, Atanu, Lee, Chia-Yu, Chen, Ming-Jang, Lin, Ray-Ming
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Volume:
11
Language:
english
Journal:
Nanoscale Research Letters
DOI:
10.1186/s11671-016-1448-z
Date:
December, 2016
File:
PDF, 2.02 MB
english, 2016
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