Improvements of epitaxial quality and stress state of GaN grown on SiC by in situ SiNxinterlayer
Huang, Zhen, Zhang, Yuantao, Deng, Gaoqiang, Li, Baozhu, Cui, Shuang, Liang, Hongwei, Chang, Yuchun, Song, Junfeng, Zhang, Baolin, Du, GuotongVolume:
27
Language:
english
Journal:
Journal of Materials Science: Materials in Electronics
DOI:
10.1007/s10854-016-5071-7
Date:
October, 2016
File:
PDF, 4.81 MB
english, 2016