Sulfur passivation of semi-insulating GaAs: Transition from...

Semiconductors 2016 / 4 Vol. 50; Iss. 4

Sulfur passivation of semi-insulating GaAs: Transition from Coulomb blockade to weak localization regime

Bagraev, N. T., Chaikina, E. I., Danilovskii, E. Yu., Gets, D. S., Klyachkin, L. E., L’vova, T. V., Malyarenko, A. M.
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Volume:
50
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782616040060
Date:
April, 2016
File:
PDF, 1.51 MB
english, 2016
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