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Size-Dependent Resistive Switching Properties of the Active Region in Nickel Nitride-Based Crossbar Array Resistive Random Access Memory
Kim, Hee-Dong, Yun, Min Ju, Hong, Seok Man, Kim, Tae GeunVolume:
14
Language:
english
Journal:
Journal of Nanoscience and Nanotechnology
DOI:
10.1166/jnn.2014.10090
Date:
December, 2014
File:
PDF, 584 KB
english, 2014