Study of MOS-gated strained-Si Buried Channel Field Effect...

IETE Journal of Research 2007 / 05 Vol. 53; Iss. 3

Study of MOS-gated strained-Si Buried Channel Field Effect Transistors

Fobelets, K, Velazquez-Perez, J E, Hackbarth, T
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Volume:
53
Language:
english
Journal:
IETE Journal of Research
DOI:
10.1080/03772063.2007.10876139
Date:
May, 2007
File:
PDF, 894 KB
english, 2007
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