![](/img/cover-not-exists.png)
Study of MOS-gated strained-Si Buried Channel Field Effect Transistors
Fobelets, K, Velazquez-Perez, J E, Hackbarth, TVolume:
53
Language:
english
Journal:
IETE Journal of Research
DOI:
10.1080/03772063.2007.10876139
Date:
May, 2007
File:
PDF, 894 KB
english, 2007