Modified dislocation filter method: toward growth of GaAs...

Applied Physics A: Materials Science & Processing 2016 / 6 Vol. 122; Iss. 6

Modified dislocation filter method: toward growth of GaAs on Si by metal organic chemical vapor deposition

Hu, Haiyang, Wang, Jun, He, Yunrui, Liu, Kai, Liu, Yuanyuan, Wang, Qi, Duan, Xiaofeng, Huang, Yongqing, Ren, Xiaomin
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Volume:
122
Language:
english
Journal:
Applied Physics A
DOI:
10.1007/s00339-016-0116-6
Date:
June, 2016
File:
PDF, 1.27 MB
english, 2016
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