![](/img/cover-not-exists.png)
Annealing induced amorphous/crystalline silicon interface passivation by hydrogen atom diffusion
Dai, Xiaowan, Cai, Hongkun, Zhang, Dexian, Chen, Guifeng, Wang, Yong, Liu, Wei, Sun, YunVolume:
27
Language:
english
Journal:
Journal of Materials Science: Materials in Electronics
DOI:
10.1007/s10854-015-3806-5
Date:
January, 2016
File:
PDF, 952 KB
english, 2016