Engineering of an insulating buffer and use of AlN...

physica status solidi (a) 2003 Vol. 195; Iss. 1

Engineering of an insulating buffer and use of AlN interlayers: two optimisations for AlGaN–GaN HEMT-like structures

Z. Bougrioua, I. Moerman, L. Nistor, B. Van Daele, E. Monroy, T. Palacios, F. Calle, M. Leroux
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Volume:
195
Year:
2003
Language:
english
Pages:
8
DOI:
10.1002/pssa.200306305
File:
PDF, 396 KB
english, 2003
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