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On-line growth control of MOCVD deposited GaN and related ternary compounds via spectroscopic ellipsometry and X-ray diffraction
A. Bonanni, K. Schmidegg, A. Montagne Ramil, A. Kharchenko, J. Bethke, K. Lischka, H. SitterVolume:
201
Year:
2004
Language:
english
Pages:
6
DOI:
10.1002/pssa.200404805
File:
PDF, 226 KB
english, 2004