Forward-bias degradation in 4H–SiC p+nn+ diodes: Influence...

physica status solidi (a) 2005 Vol. 202; Iss. 4

Forward-bias degradation in 4H–SiC p+nn+ diodes: Influence of the mesa etching

N. Camara, A. Thuaire, E. Bano, K. Zekentes
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Volume:
202
Year:
2005
Language:
english
Pages:
5
DOI:
10.1002/pssa.200460469
File:
PDF, 233 KB
english, 2005
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