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Optical properties and carrier dynamics in differently strained GaN epilayers grown on Si by MOVPE
E. V. Lutsenko, V. N. Pavlovskii, A. V. Danilchyk, K. A. Osipov, N. V. Rzheutskii, V. Z. Zubialevich, A. L. Gurskii, G. P. Yablonskii, T. Malinauskas, K. Jarašiūnas, K. Kazlauskas, S. Juršėnas, S. MiaVolume:
203
Year:
2006
Language:
english
Pages:
5
DOI:
10.1002/pssa.200565117
File:
PDF, 173 KB
english, 2006