Interface of atomic layer deposited Al2O3 on H-terminated...

Interface of atomic layer deposited Al2O3 on H-terminated silicon

K. Y. Gao, F. Speck, K. Emtsev, Th. Seyller, L. Ley, M. Oswald, W. Hansch
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Volume:
203
Year:
2006
Language:
english
Pages:
6
DOI:
10.1002/pssa.200566014
File:
PDF, 559 KB
english, 2006
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